Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device and electronic device

ABSTRACT

A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed.

RELATED APPLICATION DATA

This application is a continuation of U.S. patent application Ser. No.12/395,948, now U.S. Pat. No. 7,989,253, filed Mar. 2, 2009, theentirety of which is incorporated herein by reference to the extentpermitted by law. The present application claims priority to JapanesePatent Application No. JP 2008-080008 filed in the Japanese PatentOffice on Mar. 26, 2008, the entirety of which also is incorporated byreference herein to the extent permitted by law.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates to a method of forming a mask for lithography, amethod of forming mask data for lithography, a method of manufacturing aback-illuminated solid-state imaging device and the back-illuminatedsolid-state imaging device and an electronic device.

2. Description of the Related Art

As a one of solid-state imaging devices, there is a so-calledback-illuminated CMOS image sensor which takes incident light from theside of a surface (back face) opposite to a surface (front face) onwhich a wiring portion of a device region in which photoelectricconversion elements are formed is formed (for example, refer toJP-A-2003-31785 (Patent Document 1)). It is not necessary to arrangerespective metal wiring of a wiring layer in consideration of a lightreceiving surface by applying a structure of taking incident light fromthe back side, therefore, flexibility of wiring is increased. As aresult, it is possible to realize miniaturization of pixels and toincrease the open area ratio.

Since a chip is mounted upside down in the back-illuminated CMOS imagesensor, a taken image is mirror-reversed with respect to afront-illuminated CMOS image sensor. For example, when a taken image ofthe front-illuminated type is an image shown in FIG. 9A, a taken imageof the back-illuminated CMOS image sensor is mirror-reversed withrespect to the front-illuminated taken image as shown in FIG. 9B. Inthis case, in order to allow the taken image of the back-illuminatedtype and the taken image of the front-illuminated type to have the sameleft-to-right relationship, a mirror reverse function using a linememory and the like have to be provided at a signal processing IC in asequential stage.

SUMMARY OF THE INVENTION

In addition to the above, the following disadvantages occur in theback-illuminated CMOS image sensor in which the taken image ismirror-reversed with respect to the taken image of the front-illuminatedCMOS image sensor. FIG. 10A and FIG. 10B show design data of chips of afront-illuminated (A) and a back-illuminated (B) CMOS image sensors asexamples.

First, as shown in FIG. 11A and FIG. 11B, an I/O drawing (terminaldrawing) in which terminal positions of the CMOS image sensor areprescribed is mirror-reversed. The case of the front-illuminated type isshown in FIG. 11A and the case of the back-illuminated type is shown inFIG. 11B, respectively. When the I/O drawing in which terminal positionsare prescribed is mirror-reversed in this manner, it is necessary toredesign a board on which the sensor is mounted at the time ofevaluation or as a product as shown in FIG. 12A and FIG. 12B.

The case of the front-illuminated type is shown in FIG. 12A and the caseof the back-illuminated type is shown in FIG. 12B, respectively. Anevaluation circuit indicates a circuit including a regulator, variouscheck terminals and the like.

However, all we have to do is not simply redesign of the board so as tobe mirror-reversed because of the following reasons. As one of thereasons, directions in which signals are inputted or outputted,positions of power supply terminals and the like are usually fixed atpositions so as to be easily used, therefore, it is not desirable thatthese positions are mirror-reversed.

As another reason, even when terminal positions of power supplyterminals and the like of the sensor are mirror-reversed, terminalpositions of other devices such as a PLD (Programmable Logic Device) arenot mirror-reversed, therefore, wiring between them is not sufficient bybeing simply mirror-reversed. Specifically, the CMOS image sensor willhave a form in which wiring is performed so as to reverse theinput-output relationship as shown in FIG. 12B.

Concerning the wiring as described above, wiring may be performed on theboard or a conversion connector between a sensor package and a socketmay used. However, the wiring is considerably difficult and noise isliable to occur when applying either of these countermeasures becausemore than several dozen of wirings intersect. Particularly, when usingthe conversion connector, the height from the board surface changes,which is a disadvantage for the image sensor.

If there exists the back-illuminated CMOS image sensor by itself, thereis no problem of reversal of signals and terminal positions, and anevaluation system, a signal processing IC of a subsequent stage, asystem, a camera and the like may be formed so as to correspond to thesensor. However, the back-illuminated CMOS image sensor actuallycoexists with the front-illuminated CMOS image sensor on the grounds oftradeoff between costs and performance. In this case, it is notdesirable that right and left of signals, positions of input/outputterminals and the like change on a great scale.

The following countermeasures have been applied to the above advantagesin the past. The simplest countermeasure is that design data of a chipas shown in FIG. 13A is designed so as to perform reverse scanning inthe horizontal scanning direction. In this case, the taken image will benormal as shown in FIG. 9A. Therefore, the processing system of thesubsequent stage in related art can be used as it is.

However, terminal positions are reserved by turning over the chip asshown in FIG. 13B, the problem of the board on which the sensor ismounted (FIG. 13C) remains. Even when the existing front-illuminatedchip is used as the back-illuminated chip, the board has to be madeagain. In a test in a state of wafer, complication and costs aregenerated for forming a probe for mirror-reversal and for allowingsoftware to address the mirror-reversal.

Fundamentally, as shown in FIG. 14B, it is necessary to design the chipfrom the beginning so that the terminal positions are placed in themirror-reversed manner. The design from the beginning seems to have noproblem, but actually there are disadvantages. The CMOS image sensor isdesigned using IP (Intellectual Property). The back-illuminated type isalso designed by using the IP of a common CMOS library, which isnaturally used in the front-illuminated type.

For example, when focusing on differential input/output terminals suchas a case in which an output state of the CMOS image sensor has adifferential output configuration, a positive terminal and a negativeterminal are replaced with each other. As a result, specifications whichare usually common to all CMOS LSI not limited to the CMOS image sensorsbecome different in the back-illuminated type, and disadvantages suchthat measurement or mounting on the camera have to be performedindividually.

Particularly, when making the sensor compatible with thefront-illuminated type, it is necessary to reconfigure the whole blockarrangement and wiring in the same manner as the above example of thesensor mounting board because directions of terminals of IP are notchanged even in an internal block. Therefore, it is not certain that thelayout which is optimized by reducing waste in the front-illuminatedtype fits the size of the back illuminated type in the first place.

Thus, it is desirable to provide a method of forming a mask forlithography, a method of forming mask data for lithography, a method ofmanufacturing a back-illuminated solid-state imaging device, theback-illuminated solid-state imaging device and an electronic device,which can deal with the back-illuminated type, not distinguished fromthe front-illuminated type.

According to an embodiment of the invention, when forming mask data forlithography used for manufacturing a back-illuminated solid-stateimaging device which takes incident light from the side of a surfaceopposite to the side of a surface on which wiring of a device region inwhich photoelectric conversion elements are formed is formed, reversedata in which positions of at least part of output terminals arereversed is regarded as mask data for lithography and the mask is formedby using the mask data.

The mask is formed by using reverse data in which positions of at leastpart of output terminals are reversed, thereby manufacturing asolid-state imaging device which can deal with the back-illuminatedtype, not distinguished from the front-illuminated type. Theback-illuminated solid-state imaging device thus manufactured can beused by being applied on an electric device using a solid-state imagingdevice in an image taking unit (photoelectric conversion unit) as thesolid-state imaging device.

According to an embodiment of the invention, the back-illuminated typecan be dealt with, not distinguished from the front-illuminated type,therefore, it is not necessary to request an evaluation board on whichthe back-illuminated CMOS image sensor is mounted or a signal processingIC in a subsequent stage to have particular specifications as well as toincrease costs for them.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a system configuration diagram showing an outline of aback-illuminated CMOS image sensor to which an embodiment of theinvention is applied;

FIG. 2 is a circuit diagram showing an example of a circuitconfiguration of a unit pixel;

FIG. 3 is a cross-sectional view showing an example of aback-illuminated type pixel structure;

FIG. 4A to FIG. 4E are conceptual diagrams of design of aback-illuminated CMOS image sensor according to Embodiment 1;

FIG. 5A to FIG. 5D are conceptual diagrams showing a procedure offorming a reverse mask data;

FIG. 6A and FIG. 6B are diagrams showing examples of maskconfigurations, in which FIG. 6A shows a mask of a front-face processand FIG. 6B shows a mask of a back-face process;

FIG. 7A to FIG. 7F are conceptual diagrams of design of aback-illuminated CMOS image sensor according to Second Embodiment;

FIG. 8 is a block diagram showing an example of a configuration of animaging apparatus according to an embodiment of the invention;

FIG. 9A is a view showing a taken image of the front-illuminated typeand FIG. 9B is a view showing a taken image of the back-illuminatedtype;

FIG. 10A and FIG. 10B are diagrams showing design data of chips of thefront-illuminated and back-illuminated CMOS image sensors;

FIG. 11A and FIG. 11B are diagrams showing I/O drawings (terminaldrawings) prescribing terminal positions the CMOS image sensors, inwhich FIG. 11A shows the case of the front-illuminated type and FIG. 11Bshows the case of the back-illuminated type;

FIG. 12A and FIG. 12B are diagrams showing boards on which the sensor ismounted at the time of evaluation or as a product, in which FIG. 12Ashows the case of the front-illuminated type and FIG. 12B shows the caseof the back-illuminated type;

FIG. 13A and FIG. 13C are explanatory diagrams concerning Related Art 1;and

FIG. 14A and FIG. 14C are explanatory diagrams concerning Related Art 2.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the invention will be explained in detailwith reference to the drawings.

[Solid-State Imaging Device]

FIG. 1 is a system configuration diagram showing an outline of a systemconfiguration of a back-illuminated solid-state imaging device, forexample, a back-illuminated CMOS image sensor, to which an embodiment ofthe invention is applied.

As shown in FIG. 1, a CMOS image sensor 10 according to an applicationexample includes a pixel array unit 12 formed on a semiconductorsubstrate (chip) 11 and a peripheral circuit portion integrated on thesame chip 11 as the pixel array portion 12. As the peripheral circuitportion, for example, a vertical drive unit 13, a column processing unit14, a horizontal drive unit 15, an output circuit unit 16 and a systemcontrol unit 17 are provided.

In the pixel array unit 12, unit pixels (which are sometimes written asmerely “pixels” in the following description) each having aphotoelectric conversion element which generates light charges of theelectric charge amount corresponding to the incident light amount andaccumulates the light charges inside are arranged two-dimensionally in amatrix state. A specific configuration of the unit pixel will bedescribed later.

In the pixel array unit 12, pixel drive lines 121 are arranged withrespect to each line of matrix-state pixel arrangement along thehorizontal direction/row direction (arrangement direction of pixels ofpixel rows) and vertical signal lines 122 are arranged with respect toeach column along the vertical direction/column direction (arrangementdirection of pixels of pixel columns). In FIG. 1, one pixel drive line121 is shown, it is not limited to one. One end of the pixel drive line121 is connected to an output terminal corresponding to each row in thevertical drive unit 13.

The vertical drive unit 13 includes a shift register, an address decoderand the like, which is a pixel drive unit driving all pixels of thepixel array unit 12 simultaneously or driving respective pixels by eachrow. The vertical drive unit 13 usually includes two scanning systems ofa reading scanning system and a sweep scanning system, though thespecific configuration thereof is not shown.

The reading scanning system selectively scans unit pixels of the pixelarray unit 12 sequentially for reading signals from the unit pixels. Thesweep scanning system performs sweep scanning with respect to a readingrow which is scanned by the reading scanning system before the readingscanning by the time of shutter speed.

According to the sweep scanning by the sweep scanning system,unnecessary charges are swept out (reset) from the photoelectricconversion elements of unit pixels of the reading row. Then, a so-calledelectronic shutter operation is performed by the sweeping (reset) ofunnecessary charges by the sweep scanning system. The electronic shutteroperation means an operation in which light charges of the photoelectricconversion elements are swept off and exposure is started anew(accumulation of light charges is started).

A signal read by the reading operation by the reading scanning systemcorresponds to the light amount incident after the reading operationjust before or the electronic shutter operation. A period from thereading timing by the reading operation just before or the sweepingtiming by the electronic shutter operation until the reading timing bythe reading operation at this time will be accumulation time (exposuretime) of light charges in the unit pixel.

Signals outputted from respective unit pixels of the pixel row whichhave been selectively scanned by the vertical drive unit 13 are suppliedto the column processing unit 14 through each vertical signal line 122.The column processing unit 14 performs a prescribed signal processing tosignals outputted through the vertical signal line 122 of the selectedrow by each pixel column of the pixel array unit 12 as well astemporarily holds the pixel signals after the signal processing.

Specifically, the column processing unit 14 performs signal processingwith respect to the signals received from respective unit pixels, whichare, for example, noise elimination by CDS (Correlated Double Sampling),signal amplification, AD (analog-digital) conversion and the like. Fixedpattern noise peculiar to pixels such as reset noise or variation ofthreshold values of an amplification transistor is eliminated. Thesignal processing exemplified here is just examples, not limited to theabove.

The horizontal drive unit 15 includes a shift register, an addressdecoder and the like, sequentially selects unit circuits correspondingto pixel columns in the column processing unit 14. According to theselection scanning by the horizontal drive unit 15, pixel signalsprocessed in the column processing unit 14 are outputted sequentially toa horizontal bus 18 and transmitted to the output circuit unit 16 by thehorizontal bus 18.

The output circuit unit 16 processes signals transmitted by thehorizontal bus 18 and outputs them. As the processing in the outputcircuit unit 16, in addition to a case that only buffering processing isperformed, various digital signal processing such as adjusting the blacklevel before the buffering or correcting variations by each column canbe cited.

The output circuit unit 16 has a differential output configuration whichoutputs differential signals from an output stage thereof. Specifically,the output stage of the output circuit unit 16 outputs signalstransmitted by the horizontal bus 18 by processing them aspositive-phase signals as well as outputs the signals by invertingpolarity as negative-phase signals. As the output stage of the outputcircuit unit 16, for example, a LVDS (Low Voltage Differential Signal)circuit is used.

The positive-phase signals are outputted to the outside of the chip 11through a positive-phase output terminal 19A and the negative-phasesignals are outputted to the outside of the chip 11 through anegative-phase output terminal 19B. When the output stage of the outputcircuit unit 16 has the differential output configuration, the signalprocessing unit provided outside the chip 11, for example, a signalprocessing IC receives positive-phase and negative-phase signals at aninput stage of a differential circuit configuration.

The output stage of the output circuit unit 16 has the differentialoutput configuration and the input stage of the signal processing IC hasthe differential circuit configuration, thereby transmitting informationby electric current between the output stage of the output circuit unit16 and the input stage of the signal processing IC. Accordingly, evenwhen a transmission path between the output stage of the output circuitunit 16 and the input stage of the signal processing IC is long, chargeand discharge at the transmission path becomes small, as a result, highspeed processing of the system can be realized.

The system control unit 17 receives the clock given from the outside ofthe chip 11, data indicating an operation mode and the like as well asoutputs data such as internal information of the CMOS image sensor 10.The system control unit 17 further includes a timing generatorgenerating various timing signals, performing drive control of theperipheral circuit portion such as the vertical drive unit 13, thecolumn processing unit 14 and the horizontal drive unit 15 based onvarious timing signals generated in the timing generator.

Respective terminals of the input/output terminal groups 20, 21including the power supply terminal are provided in a periphery of thechip 11. The input/output terminal groups 20, 21 give and receive powersupply voltage and signals between the inside and the outside of thechip 11. Positions of arranging the input/output terminal groups 20, 21are determined to be user-friendly positions in consideration of thedirections in which signals are inputted and outputted.

(Pixel Circuit)

FIG. 2 is a circuit diagram showing an example of a circuitconfiguration of a unit pixel 30. The unit pixel according to thecircuit example includes a photodiode 31 which is a photoelectricconversion element, and four transistors, for example, a transfertransistor 32, a reset transistor 33, an amplification transistor 34 anda selection transistor 35. In this case, as the transistors 32 to 35,for example, an N-channel MOS transistor is applied, however, it is notlimited to this.

As the above-described pixel drive line 121, a transfer control line1211, a reset control line 1212 and a selection control line 1213 arearranged for controlling driving of the transfer transistor 32, thereset transistor 33 and the selection transistor 35.

The transfer transistor 32 is connected between a cathode electrode ofthe photodiode 31 and a floating diffusion capacitance 36. Light charges(electrons in this case) which are photoelectrically converted in thephotodiode 31 and accumulated therein are transferred to the floatingdiffusion capacitance 36 by a transfer pulse TRG being given to a gateelectrode through the transfer control line 1211. The floating diffusioncapacitance 36 functions as a charge-voltage converter which convertslight charges into a voltage signal.

A drain electrode of the reset transistor 33 is connected to a pixelpower source of a power supply voltage Vdd and a source electrodethereof is connected to the floating diffusion capacitance 36respectively. The reset transistor 33 resets a potential of the floatingdiffusion capacitance 36 by a reset pulse RST given to a gate electrodethrough the reset control line 1212 before the transfer of light chargesfrom the photodiode 31 to the floating diffusion capacitance 36.

A gate electrode of the amplification transistor 34 is connected to thefloating diffusion capacitance 36 and a drain electrode thereof isconnected to the pixel power source of the power supply voltage VDD. Theamplification transistor 34 outputs the potential of the floatingdiffusion capacitance 36 which has been reset by the reset transistor 33as a reset level, and further outputs the potential of the floatingdiffusion capacitance 36 after light charges were transferred by thetransfer transistor 32 as a signal level.

A drain electrode of the selection transistor 35 is connected to asource electrode of the amplification transistor 34 and a sourceelectrode thereof is connected to the vertical signal line 122respectively, which becomes on-state by a selection pulse SEL given to agate electrode through the selection control line 1213, outputting asignal outputted from the amplification transistor 34 in a state ofselecting the pixel 30 to the vertical signal line 122. It is possibleto apply a configuration in which the selection transistor 35 isconnected between the power supply voltage Vdd and the drain electrodeof the amplification transistor 34.

In this case, the unit pixel 30 having four transistors including thetransfer transistor 32, the reset transistor 33, the amplificationtransistor 34 and the selection transistor 35 is cited as an example,however, it is just one example. That is, the unit pixel 30 is notlimited to the pixel configuration of four transistors.

(Pixel Configuration of Back-Illuminated Type)

FIG. 3 is a cross-sectional view showing an example of aback-illuminated type pixel structure. In this case, a cross-sectionalconfiguration of two pixels is shown.

In FIG. 3, in a silicon portion 41, a photodiode 42 and a pixeltransistor 43 are formed. That is, the silicon portion 41 is a deviceregion. In this case, the photodiode 42 corresponds to the photodiode 31of FIG. 2. The pixel transistor 43 corresponds to the transistors 32 to35 of FIG. 2.

On one surface side of the silicon portion 41, a color filter 45 and anon-chip lens 46 are formed through an interlayer film 44. According tothis, light incident from one surface side of the silicon portion 41 isintroduced to a light receiving surface of the photodiode 42 via theon-chip lens 46 and the color filter 45.

On the other surface side of the silicon portion 41, a wiring portion 47in which the gate electrode and metal wiring of the pixel transistor 43are wired. On a surface of the wiring portion 47, which is opposite tothe silicon portion 41, a support substrate 49 is attached by anadhesive 48.

In the pixel configuration, the wiring portion 47 side of the siliconportion 41 in which photodiode 42 and the pixel transistor 43 are formedis referred to as the front-face side, and the other side of the siliconportion 41, which is opposite to the wiring portion 47 is referred to asthe back-face side. Under such definition, the pixel configuration willbe back-illuminated type pixel configuration because incident light istaken from the back-face side of the silicon portion 41.

In the following description, a process of forming the pixel transistor43 at the front side of the silicon portion 41 and forming metal wiringin the wiring portion 47 in the back-illuminated type pixelconfiguration is referred to as a front-face process. In addition, aprocess of forming the color filter 45 and the on-chip lens 46 at theback-face side of the silicon portion 41 is referred to as a back-faceprocess.

(Design of the Back-Illuminated CMOS Image Sensor)

Hereinafter, specific embodiments when designing the back-illuminatedCMOS image sensor 10 will be explained.

(Embodiment 1)

As shown in FIG. 4A to FIG. 4D, design data (FIG. 4A) which is layoutdata of a chip of the back-illuminated CMOS image sensor 10 is designedin the same manner as the front-illuminated type by using an IP of thenormal CMOS process without considering mirror reversal of a taken image(FIG. 4C) by the back illumination. Here, IP (Intellectual Property)means intellectual property (functional block) which has been alreadydeveloped.

An I/O drawing (FIG. 4B) which is a terminal drawing and a signaldrawing are formed as they are without considering mirror reversal ofthe taken image (FIG. 4C). After the layout data of the whole chip ismade, the layout data, that is, design data (FIG. 4A) of the chip ismirror-reversed as the whole chip before being transcribed to a mask forphotolithography for manufacture and reverse mask data (FIG. 4E) isformed anew in Embodiment 1.

The formation of the reverse mask data (FIG. 4E) can be easily realizedby replacing all signs of x-coordinates of design data (FIG. 4A) of thechip which is original data. The manufacture of the back-illuminatedCMOS image sensor 10 is performed by using a mask for lithography onwhich the layout based on the reverse mask data (FIG. 4E) is printed.

The CMOS image sensor 10 manufactured as described above is reversed asa whole, however, terminal positions as well as the obtained taken imageare normal when seeing from the back-face side because the reverse isreversed. Concerning the differential output of the output circuit unit16 shown in FIG. 1, the positive terminal and the negative terminal arenot replaced.

When making a back-illuminated chip which is compatible with thefront-illuminated chip is made, it is not necessary to perform the wholeredesign as in related art. For example, it is not necessary to rewirebetween blocks in the chip. The chip having the same terminal positionsand signal data can be formed just by replacing or changing parts ofprocesses relating to the back-face side, using layout data of thefront-illuminated type.

When forming the reverse mask data (FIG. 4E), the following processingis important. Specifically, as shown in FIG. 5A to FIG. 5D, a mark 51 tobe arranged on the chip in marks in the front-face side is possessed asdifferent data (layer) from the layout data (FIG. 5A) of the chip, thatis, data of a matching mark (FIG. 5B). Before proceeding to theformation of the mask, the design data of the chip (FIG. 5A) is reversedto be reversed design data (FIG. 5C). The data of the matching mark(FIG. 5B) is not reversed. Then, the reversed design data (FIG. 5C) andthe data of the matching mark (FIG. 5B) are superimposed to obtainreverse mask data (FIG. 5D).

Here, as the mark 51 arranged on the chip, a mark used for matching forlithography, a mark for using examination in manufacturing processessuch as the line width and the film thickness, a mark for specifying thechip, a mark be used as a reference of coordinates at the time ofexamination in manufacturing processes and the like can be cited. Thatis, the mark 51 means all “signs” which can be recognized as marks, notrelated to operations of the chip.

The mark 51 arranged on the chip is possessed as different data from thelayout data (FIG. 5A), the design data of the chip (FIG. 5A) is reservedand superimposed on the data of the matching mark (FIG. 5B) as it is tobe the reverse mask data (FIG. 5D), thereby obtaining the followingadvantages. Specifically, occurrence of problems involved in thematching for the lithography on manufacturing processes or in theexamination in the manufacturing processes can be prevented. The mark inthe back-face side is reversed with the design data of the chip (FIG.5A), therefore, it can be placed in the same layer as the design data(FIG. 5A). In the front-face process, a symmetrical mark or mark theshape of which is not determined can be placed in the same layer as thedesign data (FIG. 5A).

The chip data thus made as described above (that is, the reverse maskdata) is set in a frame 52 as shown in FIG. 6A and FIG. 6B. Here, anexample in which one chip is put in a TEG (Test Element Group) is shown.Also in the frame 52, various marks 53 exist such as a number of themask, however, a method of forming the frame 52 will be the same as inrelated art. The detailed description thereof is omitted here.

As shown in FIG. 6A, a reverse mask data 54 to which the reverse processhas been performed which has not performed in the past is fitted to theframe 52 which is the same as the related art, that is, to which thereverse operation is not performed. Each lithography mask (FIG. 6A) ofthe front-face process is formed based on the whole data. The mask (FIG.6B) of the back-face process is formed based on data in which the frameand the whole chip accommodated therein are mirror-reversed. The wholereversal including the frame was also performed in the back-illuminatedCMOS image sensor in related art, which is not a feature ofEmbodiment 1. Here, explanation is made in order to describe clearly thedifference between the whole reversal including the frame in related artand the reversal of only the chip affecting the front-face process ofEmbodiment 1.

In the manufacturing process, attention should be paid to ionimplantation with respect to a wafer (semiconductor substrate).Normally, the inclination to the wafer to which ion implantation isperformed is determined based on chip data (reversal mask data) (forexample, refer to JP-A-2000-223687). In Embodiment 1, chip data isreversed before the mask, therefore, it is preferable that theinclination of ion implantation is also mirror-reversed accordingly inthe process of minding the inclination of the ion implantation. Forexample, when ion implantation is performed at an angle of 8 degreesfrom the left of the wafer in the normal state, ion implantation isperformed at an angle of 8 degrees from the right in this case.

According to Embodiment 1 explained as the above, it is not necessary toconsider the mirror reversal of the taken image due to the backillumination even for the development and design, therefore, there areadvantages both for designers and manufacturers. Particularly, whenforming the back-illuminated chip which is compatible with thefront-illuminated chip, the whole redesign is not necessary as inrelated art and it is possible to make the chip in which terminalpositions as well as signal data are the same by using layout data ofthe front-illuminated type.

(Embodiment 2)

For part of the IP, a library for back illumination is preparedseparately. Here, the library means database in which basic logic gates,logic circuit blocks, cells and the like which are units for design arecollected so as to use programs having particular functions from otherprograms.

As shown in FIG. 7A to FIG. 7F, an I/O cell in which differentialinput/output terminals, namely, positions of a terminal forpositive-phase signals and a terminal for negative-phase signals arereversed is included in a library for back illumination. Design data ofa chip (FIG. 7A) is designed by using the I/O cell at an interfaceportion, which are represented as a terminal A′ and a terminal B′ inFIG. 7A.

A normal LVDS I/O library is shown in FIG. 7E and a LVDS I/O library fora back-illuminated CMOS image sensor 10 is shown in FIG. 7F,respectively. The LVDS circuit is used for a circuit portion of anoutput stage at which differential signals, namely, a positive-phasesignal and a negative-phase signal in the output circuit unit 16 shownin FIG. 1 are outputted as described above.

Then, the chip is designed so that all configurations are reversed as inthe case of Related Art 2 shown in FIG. 14A to FIG. 14C. An I/O drawing(FIG. 7B) is a terminal drawing obtained by mirror-reversing the designdata (FIG. 7A) of the chip. The taken image (FIG. 7C) representspositive reversal. Data used as a mask is used as it is, not reversingthe whole chip. Accordingly, disadvantages at the interface portion canbe solved.

When making a back-illuminated chip which is compatible with thefront-illuminated chip, it is necessary to redesign the whole chip andthe chip may not be formed in the same size in the same manner as thecase of Related Art 2 shown in FIG. 14A to FIG. 14C. Accordingly, thoughthe efficiency is reduced for the manufacturer, the same usability canbe obtained for a user who is satisfied with the inside of the chip as ablack box.

When making the back-illuminated image sensor 10 independently of thefront-illuminated sensor, the reduction of efficiency does not occur.However, there remain the labor due to the management difference fromthe front-illuminated type in the library and various drawings,complication for designing in consideration of mirror-reversal of thetaken image and the risk of inducing errors.

(Operational Effects According to Embodiments 1, 2)

The back-illuminated CMOS image sensor 10 is manufactured based ondesigns according to Embodiments 1, 2, thereby dealing with theback-illuminated type, not distinguished from the front-illuminatedtype. Accordingly, it is not necessary to request an evaluation board onwhich the back-illuminated CMOS image sensor 10 is mounted or a signalprocessing IC in a subsequent stage to have particular specifications aswell as to increase costs for them.

Additionally, since the back-illuminated CMOS image sensor 10 can beused in the same manner as the front-illuminated CMOS image sensor ofrelated art, there are the following advantages in electronic devices onwhich the CMOS image sensor 10 is mounted. Specifically, when making theback-illuminated chip which is compatible with the front-illuminatedchip, the layout data for the front-illuminated type can be used withoutthe whole redesign as in related art, therefore, it is possible to inputproducts earlier as well as to reduce costs. In addition, the risk ofunexpected disadvantages can be reduced.

The case that the invention is applied to the CMOS image sensor in whichunit pixels detecting signal charges in accordance with the light amountof visible light as a physical value are arranged in a matrix state hasbeen described as the example, however, the invention is not limited tothe application to the CMOS image sensor and it is also preferable thatthe invention is applied to various types of solid-state imagingdevices.

It is preferable that the solid-state imaging device is formed in aone-chip or formed in a module state having an imaging function, inwhich an imaging unit, a signal processing unit or an optical system arepackaged together.

APPLICATION EXAMPLE

The back-illuminated solid-state imaging device according to anembodiment of the invention can be applied by being mounted on variouskinds of electronic devices using a solid-state imaging device in animage taking unit (photoelectric conversion unit). As electronicdevices, imaging apparatuses such as a digital still camera and a videocamera, portable terminal devices having the imaging function such as acellular phone device, copying machines using a solid-state imagingdevice in an image reading unit can be cited as examples. There is acase in which the module state mounted on the electronic device, thatis, a camera module is regarded as an imaging apparatus.

(Imaging Apparatus)

FIG. 8 is a block diagram showing an example of a configuration of, forexample, an imaging apparatus as one of electronic devices according toan embodiment of the invention. As shown in FIG. 8, an imaging apparatus100 according to an embodiment of the invention includes an opticalsystem including a lens group 101 and the like, an imaging device 102, aDSP circuit 103 which is a camera signal processing circuit, a framememory 104, a display device 105, a recording device 106, an operationsystem 107 and a power supply system 108, and the DSP circuit 103, theframe memory 104 the display device 105, the recording device 106, theoperation system 107 and the power supply system 108 are connected toone another through a bus line 109.

The lens group 101 takes incident light from a subject (image light) andimages the light on an imaging surface of the imaging device 102. Theimaging device 102 converts the light amount of incident light imaged onthe imaging surface by the lens group 101 into an electric signal byeach pixel, outputting the signal as a pixel signal. Theback-illuminated solid-state imaging device such as the CMOS imagesensor 10 according to the above application example can be used as theimaging device 102.

The display device 105 includes a panel-type display device such as aliquid crystal display device or an organic EL (electroluminescence)display device, displaying moving pictures or still pictures imaged bythe imaging device 102. The recording unit 106 records moving picturesor still pictures imaged by the imaging device 102 in a recording mediumsuch as a video tape or a DVD (Digital Versatile Disk).

The operation system 107 provides operational instructions to variousfunctions included in the imaging apparatus under operation by the user.The power supply system 108 appropriately supplies various power supplyas operation power supply for the DSP circuit 103, the frame memory 104,the display device 105, the recording device 106 and the operationsystem 107 to these objects of supply.

As described above, the following operational effects can be obtained byapplying the back-illuminated CMOS image sensor 10 according to theabove embodiments as the imaging device 102 in imaging apparatuses, forexample, a video camera, a digital still camera and a camera module formobile devices such as a cellular phone device. That is, theback-illuminated CMOS image sensor 10 according to the embodiments canbe used in the same manner as the front-illuminated CMOS image sensor ofrelated art, therefore, it is possible to input products earlier and toreduce costs as well as to reduce the risk of unexpected disadvantages.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

1. A method of forming a lithography mask used in the manufacture of asolid-state imaging device, the method comprising the step of: formingthe mask using reverse data in which positions of at least some outputterminals are reversed.
 2. The method of claim 1, wherein thesolid-state imaging devices takes incident light from the side of asurface opposite to the side of a surface on which wiring of a deviceregion in which photoelectric conversion elements are formed.
 3. Themethod of claim 1, wherein the solid-state imaging device takes incidentlight from the side of a surface opposite to the side of a surface onwhich wiring of a device region in which photoelectric conversionelements are formed.
 4. The method of claim 1, further comprising thesteps of: forming layout data of a chip of the solid-state imagingdevice; thereafter forming the reserve data in which the layout data ismirror-reversed as the whole chip; and forming the mask by using thereverse data after that.
 5. The method of claim 4, wherein a markarranged on the chip as data different from the layout data and thedifferent data is superimposed on the reverse data to be the reversedata.
 6. The method of claim 5, wherein the mark is a mark used formatching for lithography, a mark used for examination in manufacturingprocesses, a mark for specifying a chip or a mark used as a reference ofcoordinates at the time of examination in the manufacturing process. 7.The method of claim 4, wherein the mask is formed by fitting the reversedata in a frame in which the reverse operation is not performed.
 8. Themethod of claim 1, wherein: the solid-state imaging device is aback-illuminated solid-state imaging device and includes an outputcircuit unit in which an output stage has a differential outputconfiguration, a positive-phase output terminal and a negative-phaseoutput terminal which output a positive-phase signal and anegative-phase signal outputted from the output circuit unit to theoutside of the chip, and positions of the positive-phase output terminaland the negative-phase output terminal are replaced when forming thereverse data.
 9. The method of claim 8, wherein: a library in whichpositions of the positive-phase output terminal and the negative-phaseoutput terminal are replaced is made, and the reverse data is formed byusing the library.
 10. A method of forming data for lithography mask,comprising the steps of: forming layout data of a chip of a solid-stateimaging device; and forming reverse data in which the layout data ismirror-reversed as the whole chip to allow the reverse data to be themask data, when forming mask data for lithography used for manufacturingsolid-state imaging device is formed.
 11. The method of claim 8, whereinthe solid-state imaging device is a back-illuminated imaging device. 12.The method of claim 8, wherein the solid-state imaging device takesincident light from the side of a surface opposite to the side of asurface on which wiring of a device region in which photoelectricconversion elements are formed.
 13. The method of claim 11, wherein thesolid-state imaging device is a back-illuminated imaging device.
 14. Themethod of claim 11, wherein the solid-state imaging device takesincident light from the side of a surface opposite to the side of asurface on which wiring of a device region in which photoelectricconversion elements are formed.
 15. The method of claim 12, wherein thedevice is a solid-state imaging device.
 16. The method of claim 15,wherein the solid-state imaging device is back-illuminated imagingdevice.
 17. A method of manufacturing a back-illuminated solid-stateimaging device, comprising the steps of: forming layout data of a chipof a solid-state imaging device; forming reverse data in which thelayout data is mirror-reversed as the whole chip; forming a lithographymask using the reverse data; and manufacturing the solid-state imagingdevice by using the lithography mask.
 18. The method of claim 9, whereinthe solid-state imaging device is a back-illuminated imaging device. 19.The method of claim 9, wherein the solid-state imaging device takesincident light from the side of a surface opposite to the side of asurface on which wiring of a device region in which photoelectricconversion elements are formed.
 20. The method of claim 17, whereininclination of ion implantation with respect to a semiconductorsubstrate is mirror-reversed so as to correspond to the reversal of thelayout data when manufacturing the solid-state imaging device by usingthe lithography mask.